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| FMMT558 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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FEATURES
* Excellent hFE characteristics at IC=100mA
* Low saturation voltages
COMPLEMENTARY TYPE Â FMMT458
Product specification
FMMT558
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Peak Pulse Current
ICM
Continuous Collector Current
IC
Base Current
IB
Power Dissipation
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX.
Collector-Base Breakdown
Voltage
V(BR)CBO -400
Collector-Emitter Breakdown
Voltage
VBR(CEO) -400
Emitter-Base Breakdown Voltage V(BR)EBO -5
Collector Cut-Off Current
ICBO ; ICES
-100
Emitter Cut-Off Current
IEBO
-100
Collector-Emitter Saturation
VCE(sat)
-0.2
Voltage
-0.5
Base-Emitter
Saturation Voltage
VBE(sat)
-0.9
Base-Emitter Turn On Voltage
VBE(on)
-0.9
Static Forward Current Transfer hFE
Ratio
100
100 300
15
Transition Frequency
fT
50
Collector-Base Breakdown
Cobo
Voltage
Switching times
ton
toff
5
95
1600
VALUE
-400
-400
-5
-500
-150
-200
500
-55 to +150
UNIT
V
V
V
mA
mA
mA
mW
°C
UNIT
V
CONDITIONS.
IC=-100µA
V
IC=-10mA*
V
IE=-100µA
nA
VCB=-320V; V+-=320V
nA
VEB=-4V
V
IC=-20mA, IB=-2mA *
V
IC=-50mA, IB=-6mA *
V
IC=-50mA, IB=-5mA *
V
MHz
pF
IC=-50mA, VCE=-10V *
IC=-1mA, VCE =-10V
IC=-50mA, VCE=-10V *
IC=-100mA, VCE =-10V*
IC=-10mA, VCE =-20V
f=20MHz
VCB =-20V, f=1MHz
ns
IC=-50mA, VCE =-100V
ns
IB1=5mA, IB2=-10mA
http://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 1
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