FMMT555 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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Product specification
FMMT555
Features
150 Volt VCEO
1 Amp continuous current
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
Rating
Unit
VCBO
-160
V
VCEO
-150
V
VEBO
-5
V
ICM
-2
A
IC
-1
A
IB
-200
mA
Ptot
500
mW
Tj,Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-Emitter Turn-on Voltage *
Static Forward Current Transfer Ratio
Transition Frequency
Output capacitance
* Pulse test: tp = 300 ìs; d
0.02.
Symbol
Testconditons
V(BR)CBO _IC=-100ìA
V(BR)CEO _IC=-10mA
V(BR)EBO _IE=-100ìA
ICBO
VCB=-140V
VCB=-140V, Ta = 100
IEBO _VEB=-4V
VCE(sat) _{IC=-100mA, IB=-10mA}
VBE(sat) _{IC=-100mA, IB=-10mA}
VBE(ON) _{IC=-100mA,VCE=-10V}
hFE
fT
Cobo
IC=-10mA, VCE=-10V
IC=-300mA, VCE=-10V
IC=-50mA,VCE=-10V,f=100MHz
VCB=-10V,f=1MHz
Marking
Marking
555
Min Typ Max Unit
-160
V
-150
V
-5
V
-0.1 ìA
-10 ìA
-0.1 ìA
-0.3 V
-1
V
-1 V
50
300
50
100
MHz
10 pF
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