FMMT551 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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Product specification
FMMT551
Features
60 Volt VCEO.
1 Amp continuous current.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
Rating
Unit
VCBO
-80
V
VCEO
-60
V
VEBO
-5
V
ICM
-2
A
IC
-1
A
IB
-200
mA
Ptot
500
mW
Tj,Tstg
-55 to +200
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Static Forward CurrentTransfer Ratio *
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp 300 ìs; d 0.02.
Marking
Marking
551
Symbol
Testconditons
V(BR)CBO IC=-100ìA
V(BR)CEO IC=-10mA
V(BR)EBO IE=-100ìA
ICBO VCB=-60V
IEBO VEB=-4V
VCE(sat) IC=-150mA,IB=-15mA
VBE(sat) IC=-150mA,IB=-15mA
IC=-150mA,VCE=-10V
hFE
IC=-1A, VCE=-10V
fT IC=-50mA,VCE=-10V,f=100MHz
Cobo VCB=-10V,f=1MHz
Min Typ Max Unit
-80
V
-60
V
-5
V
0.1 ìA
0.1 ìA
-0.35 V
-1.1 V
50
150
10
150
MHz
25 pF
http://www.twtysemi.com
[e-mail]
4008-318-123
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