FMMT455 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR

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Product specification
FMMT455
Features
140 Volt VCEO
1 Amp continuous current
Ptot = 500 mW
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
Rating
Unit
VCBO
160
V
VCEO
140
V
VEBO
5
V
ICM
2
A
IC
1
A
IB
200
mA
Ptot
500
mW
Tj,Tstg
-55 to +150
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter sustaining voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Static Forward Current Transfer Ratio
Transition frequency
Output capacitance
* Pulse test: tp = 300 ìs; d
0.02.
Symbol
Testconditons
V(BR)CBO _IC=100ìA
VCEO(sus) _IC=10mA
V(BR)EBO _IE=100ìA
ICBO _VCB=140V
IEBO _VEB=4V
VCE(sat) _{IC=150mA,IB=15mA}
hFE
fT
Cobo
IC=150mA,VCE=10V *
IC=1A, VCE=10V*
IC=50mA,VCE=10V,f=100MHz
VCB=10V, IE=0, f=1MHz
Marking
Marking
455
Min Typ Max Unit
160
V
140
V
5
V
0.1 ìA
0.1 ìA
0.7 V
100
300
10
100
MHz
15 pF
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