FMMT451 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH PERFROMANCE TRANSISTOR

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Product specification
FMMT451
Features
Low equivalent on-resistance.
1 Amp continuous current.
Ptot = 500mW.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Symbol
Rating
Unit
VCBO
80
V
VCEO
60
V
VEBO
5
V
ICM
2
A
IC
1
A
IB
200
mA
Ptot
500
mW
Tj,Tstg
-55 to +150
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Static Forward Current Transfer Ratio *
Current-gain-bandwidth product
Output capacitance
* Pulse test: tp 300 ìs; d 0.02.
Marking
Marking
451
Symbol
Testconditons
V(BR)CBO _IC=100ìA
V(BR)CEO _IC=10mA
V(BR)EBO _IE=100ìA
ICBO _VCB=60V
IEBO _VEB=4V
VCE(sat) _{IC=150mA,IB=15mA}
VBE(sat) _{IC=150mA,IB=15mA}
hFE
fT
Cobo
IC=1A, VCE=10V
IC=150mA,VCE=10V
IC=50mA,VCE=10V,f=100MHz
VCB=10V,f=1MHz
Min Typ Max Unit
80
V
60
V
5
V
0.1 ìA
0.1 ìA
0.35 V
1.1 V
10
50
150
150
MHz
15 pF
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4008-318-123
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