FMMT449 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

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Product specification
FMMT449
Features
Low equivalent on-resistance.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Base current
Power dissipation
Operating and storage temperature range
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Base-emitter voltage *
Static Forward Current Transfer Ratio
Current-gain-bandwidth product
Output capacitance
* Pulse width=300ìs. Duty cycle 2%
Marking
Marking
449
Symbol
Rating
Unit
VCBO
50
V
VCEO
30
V
VEBO
5
V
ICM
2
A
IC
1
A
IB
200
mA
Ptot
500
mW
Tj,Tstg
-55 to +125
Symbol
Testconditons
V(BR)CBO _IC=1mA,IE=0
V(BR)CEO _IC=10mA,IB=0
V(BR)EBO _{IE=100ìA,IC=0}
ICBO
VCB=40V,IE=0
VCB=40V,TamB=100
IEBO _VEB=4V,IC=0
VCE(sat) ^{IC=1A,IB=100mA}
IC=2A,IB=200mA
VBE(sat) _{IC=1A,IB=100mA}
VBE(ON) _IC=1A,VCE=2V
IC=50mA, VCE=2V*
hFE ^{IC=500mA, VCE=2V*}
IC=1A, VCE=2V*
fT
Cobo
IC=2A, VCE=2V*
IC=50mA,VCE=10V,f=100MHz
VCB=10V,f=1MHz
1.Base
2.Emitter
3.collector
Min Typ Max Unit
50
V
30
V
5
V
0.1 ìA
10 ìA
0.1 ìA
0.5
1.0
V
1.25 V
1.0 V
70
100
300
80
40
150
MHz
15 pF
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