FMMT4400 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS

SMD Type
TransistIoCrs
Product specification
FMMT4400
Features
General purpose transistors.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Operating and storage temperature range
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter cut-off current
Base cut-off current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Current-gain-bandwidth product
Output capacitance
Input capacitance
Delay time
Storage time
* Pulse test: tp 300 ìs; d 0.02.
Marking
Marking
1KZ
Symbol
Rating
Unit
VCBO
60
V
VCEO
40
V
VEBO
6
V
IC
600
mA
Ptot
330
mW
Tj,Tstg
-55 to +150
Symbol
Testconditons
V(BR)CBO _IC=0.1mA
V(BR)CEO _IC=1mA
V(BR)EBO _IE=0.1mA
ICEX _{VCE=35V VEB(off) =0.4V}
IBEX _{VCE=35V VEB(off) =3V}
hFE _{IC=150mA, VCE=1V}
VCE(sat)
IC=150mA,IB=15mA
IC=500mA,IB=50mA
VBE(sat) ^{IC=150mA,IB=15mA}
IC=500mA,IB=50mA
fT IC=20mA, VCE=10V f=100KHz
Cobo
Cibo
ton
toff
VCB=5V, IE=0, f=100KHz
VBE=0.5V, IC=0, f=100KHz
VCC=30V, IC=150mA,IB1=15mA
VBE(off)=2V
VCC=30V, IC=150mA
IB1= IB2=15mA
1.Base
2.Emitter
3.collector
Min Typ Max Unit
60
V
40
V
6
V
0.1 ìA
0.1 ìA
50
150
0.4
0.75
V
0.75
0.95
1.2
V
200
MHz
6.5 pF
30 pF
35 ns
255 ns
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1