FMMT415 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – NPN SILICON PLANAR AVALANCHE TRANSISTOR

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Product specification
FMMT415
Features
High speed pulse generators
SOT23 NPN Silicon Planar
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Peak collector current
Collector current
Power dissipation
Operating and storage temperature range
Symbol
Rating
Unit
VCBO
260
V
VCEO
100
V
VEBO
6
V
ICM
60
A
IC
500
mA
Ptot
330
mW
Tj,Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage *
Emitter-base breakdown voltage
Collector cutoff current
Emitter cut-off current
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Current in second breakdown
DC current gain *
Transition frequency
Collector-base capacitance
* Pulse test: tp = 300 ìs; d 0.02.
Marking
Marking
415
Symbol
Testconditons
V(BR)CBO _{IC=1mA,Tamb= -55 to +150}
V(BR)CEO _IC=100ìA
V(BR)EBO _IE=10ìA
ICBO
VCB=80V
VCB=80V, Tamb=100
IEBO _VEB=4V
VCE(sat) _{IC=10mA,IB=1mA}
VBE(sat) _{IC=10mA,IB=1mA}
ISB ^{VC=200V, CCE=620pF}
VC=250V, CCE=620pF
hFE _{IC=10mA,VCE=10V}
fT _{IC=10mA,VCE=20V,f=20MHz}
Ccb _{VCB=20V, IE=0, f=1MHz}
1.Base
2.Emitter
3.collector
Min Typ Max Unit
260
V
100
V
6
V
0.1 ìA
10 ìA
0.1 ìA
0.5 V
0.9 V
15
A
25
A
25
40
MHz
8 pF
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