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| FMMT4125 Datasheet, PDF (1/1 Pages) Zetex Semiconductors – SOT23 PNP SILICON PLANAR SWITCHING TRANSISTOR | |||
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Product specification
FMMT4125
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation at Tamb=25°C
Ptot
Operating and Storage Temperature Range
Tj:Tstg
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL MIN. MAX. UNIT
Collector-Base
V(BR)CBO -30
V
Breakdown Voltage
Collector-Emitter
V(BR)CEO -30
V
Breakdown Voltage
Emitter-Base
V(BR)EBO -4
V
Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
ICBO
IEBO
VCE(sat)
-50
nA
-50
nA
0.4
V
Base-Emitter
SaturationVoltage
VBE(sat)
0.95 V
Static Forward
hFE
Current Transfer Ratio
50
150
25
Transistion Frequency
fT
Output Capacitance
Cobo
Input Capacitance
Cibo
Noise Figure
N
200
4.5
10
5
MHz
pF
pF
dB
Small Signal Current
hfe
Transfer
50
200
SWITCHING CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL TYP.
UNIT
Delay Time
Rise Time
Storage Time
Fall Time
td
25
ns
tr
18
ns
ts
140
ns
tf
15
ns
VALUE
-30
-30
-4
-200
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
CONDITIONS.
IC=-10µA
IC=-1mA*
IE=-10µA
VCB=-20V
VEB=-3V
IC=-50mA, IB=-5mA*
IC=-50mA, IB=-5mA*
IC=-2mA, VCE=-1V*
IC=-50mA, VCE=-1V*
IC=-10mA, VCE=-20V, f=100MHz
VCB=-5V, IE=0, f=140KHz
VBE=-0.5V, IE=0, f=140KHz
IC=-200µA, VCE=-5V, Rg=-2kâ¦
f=30Hz to 15KHz at 3dB points
IC=-2mA, VCE=-1V, f=1KHz
CONDITIONS
VCC=-3V, VBE(off)=-0.5V
IC=-10mA, IB1=-1mA
VCC=-3V, IC=-10mA
IB1=IB2=-1mA
http://www.twtysemi.com sales@twtysemi.com 4008-318-123 1 of 1
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