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| FDV305N Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 20V N-Channel PowerTrench MOSFET | |||
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SMD Type
Product specification
FDV305N
20V N-Channel PowerTrenchï MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchildâs high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
⢠Load switch
⢠Battery protection
⢠Power management
Features
⢠0.9 A, 20 V
RDS(ON) = 220 m⦠@ VGS = 4.5 V
RDS(ON) = 300 m⦠@ VGS = 2.5 V
⢠Low gate charge
⢠Fast switching speed
⢠High performance trench technology for extremely
low RDS(ON)
D
S
SOT-23 G
D
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
PD
TJ, TSTG
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
305
FDV305N
7ââ
Ratings
20
± 12
0.9
2
0.35
â55 to +150
357
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123 1 of 2
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