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FDN8601 Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – N-Channel PowerTrench® MOSFET 100 V, 2.7 A, 109 m | |||
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Product specification
FDN8601
100 V, 2.7 A, 109 m:
Features
 Max rDS(on) = 109 m: at VGS = 10 V, ID = 1.5 A
 Max rDS(on) = 175 m: at VGS = 6 V, ID = 1.2 A
 High performance trench technology for extremely low rDS(on)
 High power and current handling capability in a widely used
surface mount package
 Fast switching speed
 100% UIL tested
 RoHS Compliant
Applications
 Primary DC-DC Switch
 Load Switch
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
(Note 1b)
Ratings
100
±20
2.7
12
13
1.5
0.6
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
75
(Note 1a)
80
°C/W
Device Marking
8601
Device
FDN8601
Package
SSOT-3
Reel Size
7 ââ
Tape Width
8 mm
Quantity
3000 units
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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