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FDN5618P Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 60V P-Channel Logic Level PowerTrench MOSFET | |||
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SMD Type
Product specification
FDN5618P
General Description
This 60V P-Channel MOSFET uses Fairchildâs high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
⢠DC-DC converters
⢠Load switch
⢠Power management
D
Features
⢠â1.25 A, â60 V. RDS(ON) = 0.170 ⦠@ VGS = â10 V
RDS(ON) = 0.230 ⦠@ VGS = â4.5 V
⢠Fast switching speed
⢠High performance trench technology for extremely
low RDS(ON)
D
S
SuperSOT TM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
(Note 1a)
â Pulsed
Maximum Power Dissipation
PD
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
618
FDN5618P
7ââ
G
S
Ratings
â60
±20
â1.25
â10
0.5
0.46
â55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
http://www.twtysemi.com
4008-318-123 1 of 2
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