|
FDN371N Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 20V N-Channel PowerTrench MOSFET | |||
|
SMD Type
Product specification
FDN371N
General Description
This 20V N-Channel MOSFET uses Fairchildâs high
voltage PowerTrench process. It has been optimized for
power management applications.
Applications
⢠Load switch
⢠Battery protection
⢠Power management
D
Features
⢠2.5 A, 20 V.
RDS(ON) = 50 m⦠@ VGS = 4.5 V
RDS(ON) = 60 m⦠@ VGS = 2.5 V
⢠Low gate charge (7.6 nC typical)
⢠Fast switching speed
⢠High performance trench technology for extremely
low RDS(ON)
D
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
371
FDN371N
7ââ
G
S
Ratings
20
± 12
2.5
10
0.5
0.46
â55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123 1 of 2
|
▷ |