FDN361AN Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – N-Channel, Logic Level, PowerTrenchΤΜ

SMD Type
Product specification
FDN361AN
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
Applications
• DC/DC converter
• Load switch
• Motor drives
Features
• 1.8 A, 30 V. R_DS(on) = 0.100 Ω @ V_GS = 10 V
R_DS(on) = 0.150 Ω @ V_GS = 4.5 V.
• Low gate charge ( 2.1nC typical ).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(on).
• High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with
30% higher power handling capability.
D
D
S
SuperSOT ^TM-3
G
Absolute Maximum Ratings ^TA^{=25oC unless otherwise noted}
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, T_stg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
R_θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
361
FDN361AN
7’’
G
S
FDN361AN
30
±²⁰
1.8
8
0.5
0.46
-55 to +150
250
75
Units
V
V
A
W
°^C
°^C/W
°^C/W
Tape width
8mm
Quantity
3000 units
http://www.twtysemi.com
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