FDN359AN Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrenchTM MOSFET

SMD Type
Product specification
FDN359AN
General Description
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
2.7 A, 30 V. R_DS(ON) = 0.046 Ω @ V_GS = 10 V
R_DS(ON) = 0.060 Ω @ V_GS = 4.5 V.
Very fast switching.
Low gate charge (5nC typical).
High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with 30% higher
power handling capability.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
D
359A
S
SuperSOT ^TM-3
G
Absolute Maximum Ratings T_A = 25^oC unless other wise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Maximum Drain Current - Continuous (Note 1a)
- Pulsed
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
D
G
S
Ratings
30
±20
2.7
15
0.5
0.46
-55 to 150
250
75
Units
V
V
A
W
°C
°C/W
°C/W
http://www.twtysemi.com
4008-318-123
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