FDN342P Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench™ MOSFET

SMD Type
Product specification
FDN342P
General Description
This P-Channel 2.5V specified MOSFET is produced in
a rugged gate version of Fairchild Semiconductor's
advanced PowerTrench process. It has been optimized
for power management applications for a wide range
of gate drive voltages (2.5V - 12V).
Applications
• Load switch
• Battery protection
• Power management
Features
• -2 A, -20 V. R_DS(ON) = 0.08 Ω @ V_GS = -4.5 V
R_DS(ON) = 0.13 Ω @ V_GS = -2.5 V.
• Rugged gate rating (±12V).
• High performance trench technology for extremely
low R_DS(ON).
• Enhanced power SuperSOT^TM-3 (SOT-23).
D
D
S
SuperSOT ^TM-3
G
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
FDN342P
FDN342P
7’’
G
S
Ratings
-20
±12
-2
-10
0.5
0.46
-55 to +150
250
75
Tape Width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
http://www.twtysemi.com
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