FDN339AN Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – N-Channel 2.5V Specified PowerTrench MOSFET

SMD Type
Product specification
FDN340P
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for portable electronics
applications: Load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
–2 A, 20 V.
RDS(ON) = 0.07 Ω @ V GS = –4.5 V
RDS(ON) = 0.11 Ω @ V GS = –2.5 V.
RDS(ON) = 0.210 Ω @ V GS = –1.8 V.
• Low gate charge (8nC typical).
• High performance trench technology for extremely
low RDS(ON) .
• High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
D
340
SuperSOT -3^TM
S
G
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
V DSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
340
FDN340P
7’’
D
G
S
Ratings
–20
±8
–2
–10
0.5
0.46
-55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
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