FDN336P Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Single P-Channel 2.5V Specified PowerTrenchTM MOSFET

SMD Type
Product specification
FDN336P
General Description
This P-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for portable electronics
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
-1.3 A, -20 V. R_DS(ON) = 0.20 Ω @ V_GS = -4.5 V
R_DS(ON) = 0.27 Ω @ V_GS= -2.5 V.
Low gate charge (3.6 nC typical).
High performance trench technology for extremely low
R_DS(ON).
High power version of industry standard SOT-23 package.
Identical pin out to SOT-23 with 30% higher power handling
capability.
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
D
336
S
SuperSOT ^TM-3
G
D
G
S
Absolute Maximum Ratings T_A = 25^oC unless other wise noted
Symbol Parameter
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
I_D
Drain Current
- Continuous
- Pulsed
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1)
FDN336P
-20
±8
-1.3
-10
0.5
0.46
-55 to +150
250
75
Units
V
V
A
W
°C
°C/W
°C/W
http://www.twtysemi.com
[e-mail]
4008-318-123
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