FDN306P Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

SMD Type
Product specification
FDN306P
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
D
Features
• –2.6 A, –12 V.
RDS(ON) = 40 mΩ @ VGS = –4.5 V
RDS(ON) = 50 mΩ @ VGS = –2.5 V
RDS(ON) = 80 mΩ @ VGS = –1.8 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
• SuperSOT^TM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
D
S
SuperSOT^TM-3
G
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
306
FDN306P
7’’
G
S
Ratings
–12
±8
–2.6
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
http://www.twtysemi.com
[e-mail]
4008-318-123
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