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FDN304PZ Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET | |||
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SMD Type
Product specification
FDN304P
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchildâs advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
⢠Battery management
⢠Load switch
⢠Battery protection
D
Features
⢠â2.4 A, â20 V.
RDS(ON) = 52 m⦠@ VGS = â4.5 V
RDS(ON) = 70 m⦠@ VGS = â2.5 V
RDS(ON) = 100 m⦠@ VGS = â1.8 V
⢠Fast switching speed
⢠ESD protection diode
⢠High performance trench technology for extremely
low RDS(ON)
⢠SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint
D
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
(Note 1a)
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
04Z
FDN304PZ
7ââ
G
S
Ratings
â20
±8
â2.4
â10
0.5
0.46
â55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123 1of 2
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