FDG6335N Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – 20V N & P-Channel PowerTrench MOSFETs

SMD Type
Product specification
FDG6335N
Applications
• DC/DC converter
• Power management
• Loadswitch
Features
• 0.7 A, 20 V.
RDS(ON) = 300 mΩ @ VGS = 4.5 V
RDS(ON) = 400 mΩ @ VGS = 2.5 V
• Low gate charge (1.1 nC typical)
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
S
G
D
S 1 or 4
Pin 1
D
G
S
G _{2 or 5}
D ^{3 or 6}
SC70-6
Dual N-Channel
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
6 or 3 ^D
5 or 2 G
4 or 1 S
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
TJ, TSTG
Power Dissipation for Single Operation
(Note 1)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.35
FDG6335N
7’’
Ratings
20
± 12
0.7
2.1
0.3
–55 to +150
415
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
http://www.twtysemi.com
[e-mail]
4008-318-123
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