FDG6322C Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – Dual N & P Channel Digital FET

SMD Type
Product specification
FDG6322C
Features
N-Ch 0.22 A, 25 V, R_DS(ON) = 4.0 Ω @ V_GS= 4.5 V,
R_DS(ON) = 5.0 Ω @ V_GS= 2.7 V.
P-Ch -0.41 A,-25V, R_DS(ON) = 1.1 Ω @ V_GS= -4.5V,
R_DS(ON) = 1.5 Ω @ V_GS= -2.7V.
Very small package outline SC70-6.
Very low level gate drive requirements allowing direct
operation in 3 V circuits (V_GS(th) < 1.5 V).
Gate-Source Zener for ESD ruggedness
(>6kV Human Body Model).
SC70-6
SOT-23
SuperSOT^TM-6
SOT-8
SO-8
SOIC-14
S2
G2
D1
pin 1
SC70-6
Mark: .22
D2
G1
S1
1
6
Q1
2
5
Q2
3
4
Absolute Maximum Ratings T_A = 25^oC unless other wise noted
Symbol Parameter
N-Channel
V_DSS
Drain-Source Voltage
25
V_GSS
Gate-Source Voltage
8
I_D
Drain Current - Continuous
0.22
- Pulsed
0.65
P_D
T_J,T_STG
ESD
Maximum Power Dissipation
(Note 1)
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note1)
0.3
-55 to 150
6
415
P-Channel
-25
-8
-0.41
-1.2
Units
V
V
A
W
°C
kV
°C/W
http://www.twtysemi.com
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4008-318-123
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