FDG330P Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – P-Channel 1.8V Specified PowerTrench MOSFET

Product specification
FDG330P
Applications
• Battery management
• Load switch
Features
• –2 A, –12 V.
RDS(ON) = 110 mΩ @ VGS = –4.5 V
RDS(ON) = 150 mΩ @ VGS = –2.5 V
RDS(ON) = 215 mΩ @ VGS = –1.8 V
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Compact industry standard SC70-6 surface mount
package
S
D
D
Pin 1
SC70-6
G
D
D
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.30
FDG330P
7’’
1
6
2
5
3
4
Ratings
–12
±8
–2
–6
0.75
0.48
–55 to +150
260
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
http://www.twtysemi.com
[e-mail]
4008-318-123
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