FDG315N Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – N-Channel Logic Level PowerTrench MOSFET

Product specification
FDG315N
Applications
• DC/DC converter
• Load switch
• Power Management
S
D
D
SC70-6
G
D
D
Features
• 2 A, 30 V. R_DS(ON) = 0.12 Ω @ V_GS = 10 V
R_DS(ON) = 0.16 Ω @ V_GS = 4.5 V.
• Low gate charge (2.1nC typical).
• High performance trench technology for extremely low
R.
DS(ON)
• Compact industry standard SC70-6 surface mount
package.
1
6
2
5
3
4
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
V_DSS
V_GSS
I_D
P_D
T_J, T_stg
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
Rθ_JA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.15
FDG315N
7’’
Ratings
30
±₂₀
2
6
0.75
0.48
-55 to +150
260
Tape Width
8mm
Units
V
V
A
W
°_C
°_C/W
Quantity
3000 units
http://www.twtysemi.com
[e-mail]
4008-318-123
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