FDG312P Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench™ MOSFET

SMD Type
Product specification
FDG312P
Applications
• Load switch
• Battery protection
• Power management
• -1.2 A, -20 V. R_DS(on) = 0.18 Ω @ V_GS = -4.5 V
R_DS(on) = 0.25 Ω @ V_GS = -2.5 V.
• Low gate charge (3.3 nC typical).
• High performance trench technology for extremely
low R_DS(ON).
• Compact industry standard SC70-6 surface mount
package.
S
D
D
SC70-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings ^TA ^{= 25°C unless otherwise noted}
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
(Note 1)
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
.12
FDG312P
7’’
Ratings
-20
±⁸
-1.2
-6
0.75
0.55
0.48
-55 to +150
260
Tape Width
8mm
Units
V
V
A
W
°^C
°^C/W
Quantity
3000 units
http://www.twtysemi.com
[e-mail]
4008-318-123
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