English
Language : 

FDG1024NZ Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Dual N-Channel PowerTrench® MOSFET 20 V, 1.2 A, 175 mΩ
SMD Type
Product specification
FDG1024NZ
Features
„ Max rDS(on) = 175 mΩ at VGS = 4.5 V, ID = 1.2 A
„ Max rDS(on) = 215 mΩ at VGS = 2.5 V, ID = 1.0 A
„ Max rDS(on) = 270 mΩ at VGS = 1.8 V, ID = 0.9 A
„ Max rDS(on) = 389 mΩ at VGS = 1.5 V, ID = 0.8 A
„ HBM ESD protection level >2 kV (Note 3)
„ Very low level gate drive requirements allowing operation in
3 V circuits (VGS(th) < 1.5 V)
„ Very small package outline SC70-6
„ RoHS Compliant
S2
G2
D1
D2
G1
S1
S1 1
G1 2
D2 3
6 D1
5 G2
4 S2
SC70-6
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
-Continuous
-Pulsed
TA = 25°C
Power Dissipation
TA = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 1a)
(Note 1b)
Ratings
20
±8
1.2
6
0.36
0.30
-55 to +150
Units
V
V
A
W
°C
RθJA
RθJA
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
350
(Note 1b)
415
°C/W
Device Marking
.24
Device
FDG1024NZ
Package
SC70-6
Reel Size
7”
Tape Width
8 mm
Quantity
3000 units
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2
 ▷