FDC6561AN Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Dual N-Channel Logic Level PowerTrenchTM MOSFET

SMD Type
Product specification
FDC6561AN
Features
2.5 A, 30 V. R_DS(ON) = 0.095 Ω @ V_GS = 10 V
R_DS(ON) = 0.145 Ω @ V_GS = 4.5 V
Very fast switching.
Low gate charge (2.1nC typical).
SuperSOT^TM-6 package: small footprint (72% smaller than
standard SO-8); low profile (1mm thick).
SOT-23
SuperSOT^TM-6
SuperSOT^TM-8
SO-8
SOT-223
SOIC-16
D2
S1
D1
pin 1
SuperSOT ^TM-6
G2
S2
G1
Absolute Maximum Ratings
Symbol Parameter
V_DSS
Drain-Source Voltage
T_A = 25°C unless otherwise note
V_GSS
Gate-Source Voltage - Continuous
I_D
Drain Current - Continuous
- Pulsed
P_D
Maximum Power Dissipation
(Note 1a)
(Note 1b)
(Note 1c)
T_J,T_STG Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R_θJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
R_θJC
Thermal Resistance, Junction-to-Case (Note 1)
4
3
5
2
6
1
Ratings
30
±20
2.5
10
0.96
0.9
0.7
-55 to 150
130
60
Units
V
V
A
W
°C
°C/W
°C/W
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