FDC6312P Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Dual P-Channel 1.8V PowerTrench Specified MOSFET

SMD Type
Product specification
FDC6312P
Applications
• Power management
• Load switch
Features
• –2.3 A, –20 V. RDS(ON) = 115 mΩ @ VGS = –4.5 V
RDS(ON) = 155 mΩ @ VGS = –2.5 V
RDS(ON) = 225 mΩ @ VGS = –1.8 V
• High performance trench technology for extremely
low R_DS(ON)
• SuperSOT^TM-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D2
S1
D1
SuperSOT ^TM -6
G2
S2
G1
Absolute Maximum Ratings TA=25^oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.312
FDC6312P
13’’
4
5
6
Ratings
–20
±8
–2.3
–7
0.96
0.9
0.7
-55 to +150
130
60
Tape width
12mm
3
2
1
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
http://www.twtysemi.com
[e-mail]
4008-318-123
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