FDC6308P Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – Dual P-Channel 2.5V Specified PowerTrench™ MOSFET

SMD Type
Product specification
FDC6308P
Applications
• Load switch
• Battery protection
• Power management
Features
• -1.7 A, -18 V. R_DS(ON) = 0.18 Ω @ V_GS = -4.5 V
R_DS(ON) = 0.30 Ω @ V_GS = -2.5 V
± • Extended V_GSS range ( 12V) for battery applications.
• Low gate charge (3nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R_DS(ON).
• SuperSOT^TM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D2
S1
D1
SuperSOT ^TM -6
G2
S2
G1
Absolute Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
Power Dissipation for Single Operation
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
4
3
5
2
6
1
Ratings
-20
±12
-1.7
-5
0.96
0.9
0.7
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
R_θJA
Thermal Resistance, Junction-to-Ambient
R_θJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.308
FDC6308P
7’’
130
60
Tape Width
8mm
°C/W
°C/W
Quantity
3000 units
http://www.twtysemi.com
[e-mail]
4008-318-123
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