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FDC608PZ Datasheet, PDF (1/2 Pages) Fairchild Semiconductor – P-Channel 2.5V Specified PowerTrench MOSFET | |||
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SMD Type
Product specification
FDC608PZ
Features
⢠â5.8 A, â20 V. RDS(ON) = 30 m⦠@ VGS = â4.5 V
RDS(ON) = 43 m⦠@ VGS = â2.5 V
⢠Low Gate Charge
⢠High performance trench technology for extremely
low RDS(ON)
⢠SuperSOT TM â6 package: small footprint (72%
smaller than standard SOâ8) low profile (1mm thick).
S
D
D
SuperSOT TM-6
G
D
D
1
6
2
5
3
4
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current â Continuous
â Pulsed
Maximum Power Dissipation
(Note 1a)
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient (Note 1a)
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
.608Z
FDC608PZ
7ââ
Ratings
â20
±12
â5.8
â20
1.6
0.8
â55 to +150
78
30
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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