FCX1151A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – PNP SILICON POWER (SWITCHING) TRANSISTOR

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Product specification
FCX1151A
Features
2W power dissipation.
5A peak pulse current.
Excellent HFE characteristics up to 5 Amps.
Extremely low saturation voltage E.g. 60mv Typ.
Extremely low equivalent on-resistance.
RCE(sat) 66mÙ at 3A.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Symbol
Rating
Unit
VCBO
-45
V
VCEO
-40
V
VEBO
-5
V
ICM
-5
A
Peak pulse current *3
IC
-3
A
Base current
Power dissipation
Operating and storage temperature range
IB
-500
mA
1 *1
W
Ptot
2 *2
W
Tj,Tstg
-55 to +150
*1 recommended Ptot calculated using FR4 measuring 15X15X0.6mm
*2 Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40X40X0.6mm
*3 Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2%
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