FCX1051A Datasheet, PDF (1/2 Pages) Zetex Semiconductors – NPN SILICON POWER (SWITCHING) TRANSISTOR

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Product specification
FCX1051A
Features
2W power dissipation.
10A peak pulse current.
Excellent HFE characteristics up to 10 Amps.
Extremely low saturation voltage E.g. 17mv Typ.
Extremely low equivalent on-resistance.
RCE(sat) 57mÙ at 3A.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Peak pulse current
Power dissipation
Operating and storage temperature range
Symbol
Rating
Unit
VCBO
150
V
VCEO
40
V
VEBO
5
V
ICM
10
A
IC
3
A
Ptot
1
W
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-55 to +150
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