EMZ1 Datasheet, PDF (1/2 Pages) SeCoS Halbleitertechnologie GmbH – Silicon Epitaxial Planar

Product specification
SOT-563 Plastic-Encapsulate Transistors
EMZ1 Dual Transistors (NPN+PNP)
FEATURES
 2SC2412 and 2SA1037 are housed independently in a package
 Transistor elements independent, eliminating interference
 Mounting cost and area can be cut in half
0$5.,1*= 
SOT-563
Z1
TR1 NPN and TR2 PNP Absolute Maximum Ratings (T_a=25℃ unless otherwise noted)
Symbol
Parameter
V_CBO
Collector-Base Voltage
V_CEO
Collector-Emitter Voltage
V_EBO
Emitter-Base Voltage
I_C
Collector Current
P_C
Collector Power Dissipation
R_θJA
Thermal Resistance from Junction to Ambient
T_J
Junction Temperature
T_stg
Storage Temperature Range
*120mW per element must not be exceeded
Value
TR1
TR2
60
-60
50
-50
7
-6
150
-150
150(Total)*
833
150
-55~+150
Unit
V
V
V
mA
mW
℃/W
℃
℃
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4008-318-123
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