EMX18 Datasheet, PDF (1/1 Pages) Rohm – General purpose transistors (dual transistors)

Product specification
SOT-563 Plastic-Encapsulate Transistors
EMX18 General purpose transistors (dual transistors)
FEATURES
z Two 2SC5585 chips in a package
z Mounting possible with SOT-563 automatic mounting machines
z Transistor elements are independent, eliminating interference
z Mounting cost and area be cut in half
Marking: X18
Equivalent circuit
SOT-563
1
1
Absolute maximum ratings (Ta=25℃)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
15
12
6
500
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V_(BR)CBO I_C=10μA, I_E=0
V_(BR)CEO I_C=1mA, I_B=0
V_(BR)EBO I_E=10μA, I_C=0
I_CBO
V_CB=15V, I_E=0
I_EBO
V_EB=6V, I_C=0
h_FE
V_CE=2V, I_C=10mA
V_CE(sat) I_C=200mA, I_B=10mA
f_T
V_CE=2V, I_E=-10mA, f=100MHz
C_ob
V_CB=10V, I_E=0, f=1MHz
Min Typ Max Unit
15
V
12
V
6
V
0.1
μA
0.1
μA
270
680
0.25
V
320
MHz
7.5
pF
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