EMT18 Datasheet, PDF (1/1 Pages) Rohm – General purpose transistors (dual transistors)

Product specification
SOT-563 Plastic-Encapsulate Transistors
EMT18 General purpose transistors (dual transistors)
FEATURES
 Two 2SA2018 chips in a SOT-563 package
 Mounting possible with SOT-563 automatic mounting machines
 Transistor elements are independent,eliminating interference
Marking: T18
SOT-563
6
5
4
1
2
3
Absolute maximum ratings (T_a=25℃)
Symbol
Parameter
V_CBO
V_CEO
V_EBO
I_C
P_C
R_θJA
T_J
T_stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
Test Conditions
V_(BR)CBO I_C=-10μA, I_E=0
V_(BR)CEO I_C=-1mA, I_B=0
V_(BR)EBO I_E=-10μA, I_C=0
I_CBO
V_CB=-15V, I_E=0
I_EBO
V_EB=-6V, I_C=0
h_FE
V_CE=-2V, I_C=-10mA
V_CE(sat) I_C=-200mA, I_B=-10mA
f_T
V_CE=-2V, I_C=-10mA, f=100MHz
C_ob
V_CB=-10V, I_E=0, f=1MHz
Value
-15
-12
-6
-0.5
150
833
150
-55~150
Units
V
V
V
A
mW
℃/W
℃
℃
Min Typ Max Unit
-15
V
-12
V
-6
V
-0.1
μA
-0.1
μA
270
680
-0.25
V
260
MHz
6.5
pF
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