EMH4 Datasheet, PDF (1/1 Pages) Rohm – General purpose (dual digital transistors)

Product specification
Digital transistors (built-in resistors)
EMH4
DIGITAL TRANSISTOR (NPN+NPN)
FEATURES
z Two DTC114T chips in a package
z Transistor elements are independent, eliminating interference
z Mounting cost and area can be cut in half
External circuit
SOT-563
1
MARKING: H4
Absolute maximum ratings (Ta=25℃)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V_(BR)CBO
50
V
V_(BR)CEO
50
V
V_(BR)EBO
5
V
I_C
100
mA
Collector Power dissipation
Junction temperature
Storage temperature
P_C
150
mW
Tj
150
℃
Tstg
-55~150
℃
Electrical characteristics (Ta=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
V_CE(sat)
h_FE
R₁
f_T
Min.
50
50
5
100
7
Typ Max. Unit
Conditions
V
I_C=50μA
V
I_C=1mA
V
I_E=50μA
0.5 μA
V_CB=50V
0.5 μA
V_EB=4V
0.3
V
I_C=10mA,I_B=1mA
600
V_CE=5V,I_C=1mA
10
13 KΩ
250
MHz V_CE=10V ,I_E=-5mA,f=100MHz
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