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EMH3 Datasheet, PDF (1/1 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – DIGITAL TRANSISTOR (NPN+ NPN)
Product specification
Digital transistors (built-in resistors)
EMH3
DIGITAL TRANSISTOR (NPN+NPN)
FEATURES
z Two DTC143T chips in a UMT package
z Transistor elements are independent, eliminating interference
z Mounting cost and area can be cut in half
External circuit
SOT-563
1
MARKING:H3
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V(BR)CBO
50
V
V(BR)CEO
50
V
V(BR)EBO
5
V
IC
100
mA
Collector Power dissipation
Junction temperature
Storage temperature
PC
150
mW
Tj
150
℃
Tstg
-55~150
℃
Electrical characteristics (Ta=25℃)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
VCE(sat)
hFE
R1
fT
Min.
50
50
5
100
3.29
Typ Max. Unit
Conditions
V
Ic=50μA
V
Ic=1mA
V
IE=50μA
0.5 μA
VCB=50V
0.5 μA
VEB=4V
0.3
V
IC=5mA,IB=0.25mA
600
VCE=5V,IC=1mA
4.7 6.11 KΩ
250
MHz VCE=10V ,IE=-5mA,f=100MHz
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4008-318-123
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