EMF24 Datasheet, PDF (1/2 Pages) Rohm – Power management (dual trnasistors)

Product specification
SOT-563 Plastic-Encapsulate Transistors
EMF24 Power management (dual transistors)
FEATURES
z 2SC4617 and DTC114E are housed independently in a package
z Power management circuit
z Power switching circuit in a single package
z Mounting cost and area can be cut in half
MARKING: F24
SOT-563
1
TR1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
60
50
7
150
150
150
-55-150
Units
V
V
V
mA
mW
℃
℃
TR1 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
M in
Collector-base breakdown voltage
V_(BR)CBO I_C=50μA,I_E=0
60
Collector-emitter breakdown voltage
V_(BR)CEO I_C=1mA,I_B=0
50
Emitter-base breakdown voltage
V_(BR)EBO I_E=50μA,I_C=0
7
Collector cut-off current
I_CBO
V_CB=60V,I_E=0
Emitter cut-off current
I_EBO
V_EB=7V,I_C=0
DC current gain
h_FE
V_CE=6V,I_C=1mA
180
Collector-emitter saturation voltage
V_CE(sat) I_C=50mA,I_B=5mA
Transition frequency
f_T
V_CE=12V,I_C=2mA,f=100MHz
Collector output capacitance
C_ob
V_CB=12V,I_E=0,f=1MHz
Typ Max Unit
V
V
V
0.1
μA
0.1
μA
390
0.4
V
180
MHz
3.5
pF
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