DTDG23YP Datasheet, PDF (1/3 Pages) Guangdong Kexin Industrial Co.,Ltd – Digital Transistors

SMD Type
Product specification
DTDG23YP
Features
NPN Epitaxial Planar Silicon Transistor
(with built-in resistors and zener diode).
High DC Current Gain.
Built-in Zener Diode Gives Strong Protection
Against Reverse Surge By L-load (an inductive load).
Absolute Maximum Ratings Ta = 25
Supply Voltage
Input Voltage
Parameter
Collector Current
Power Dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCC
60 10
V
VIN
-6 to +40
V
IC
1
A
ICP *1
2
PD *2
1.5
W
Tj
150
Tstg
-55 to +150
*1 Pw 10ms, Duty cycle 2%
*2 When mounted on 40x40x0.7mm ceramic board.
Electrical Characteristics Ta = 25
Parameter
Input Voltage
Output Voltage
Input Current
Output Current
DC Current Gain
Input Resistance
Emitter-base Resistance
Transistion Frequency
* Characteristics of built-in transistor
Symbol
Testconditons
VI(off) VCC = 5V , IO = 100 A
VI(on) VO = 0.4V , IO = 100mA
VO(on) IO/II = 500mA/5mA
II VI = 5V
IO(off) VCC = 40V , VI = 0V
GI VO = 2V , IO = 500mA
R1
R2
fT * VCE = 5V , IE = -0.1A , f = 30MHz
Min Typ Max Unit
0.3
V
2
0.4 V
3.6 mA
0.5
A
300
1.54 2.2 2.86 k
7 10 13 k
80
MHz
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