DTA114TE Datasheet, PDF (1/2 Pages) Rohm – Digital transistors (built in resistor)

SMD Type
Product specification
DTA114TE
Features
PNP Epitaxial Planar Silicon Transistor (Resistor Built-In Typ.)
Built-In Bias Resistors Enable The Configuration of An Inverter
Circuit Without Connecting External Input Resistors
(See Equivalent Circuit).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction temperature
Storage temperature
Symbol
Rating
Unit
VCBO
-50
V
VCEO
-50
V
VEBO
-5
V
IC
-100
mA
PC
150
mW
Tj
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Input Resistance
Transistion Frequency
* Characteristics of built-in transistor
Marking
Marking
94
Symbol
Testconditons
BVCBO IC = -50 A
BVCEO IC = -1mA
BVEBO IE = -50 A
ICBO VCB = -50V
IEBO VEB = -4V
VCE(sat) IC = -10mA , IB = -1mA
hFE VCE = -5V , IC = -1mA
R1
fT * VCE = -10V , IE = 5mA , f = 100MHz
Min Typ Max Unit
-50
V
-50
V
-5
V
-0.5
A
-0.5
A
-0.3 V
100 250 600
7 10 13 k
250
MHz
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