DMP3030SN Datasheet, PDF (1/1 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 4)
• Qualified to AEC-Q101 standards for High Reliability
Product specification
DMP3030SN
Mechanical Data
• Case: SC59
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture sensitivity: Level 1 per J-STD-020C
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.014 grams (approximate)
SC59
Drain
D
ESD protected
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Steady State
Pulsed Drain Current (Note 3)
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
G
S
Internal Schematic
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
-30
±20
-0.7
-2.8
Unit
V
V
A
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
500
250
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
Symbol Min
BV_DSS
-30
I_DSS
⎯
I_GSS
⎯
V_GS(th)
R_{DS (ON)}
|Y_fs|
V_SD
-1.0
⎯
⎯
⎯
C_iss
⎯
C_oss
⎯
C_rss
⎯
t_D(ON)
⎯
t_D(OFF)
⎯
t_r
⎯
t_f
⎯
Typ
⎯
⎯
⎯
⎯
0.20
0.35
1
-0.8
160
120
50
10
25
25
40
Max
⎯
-10
±10
-3.0
0.25
0.45
⎯
-1.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Test Condition
V V_GS = 0V, I_D = -250µA
μA V_DS = -30V, V_GS = 0V
μA V_GS = ±20V, V_DS = 0V
V V_DS = -10V, I_D = -1.0mA
Ω ^{VGS = -10V, ID = -0.4A}
V_GS = -4.5V, I_D = -0.4A
S V_DS = -10V, I_D = -0.4A
V V_GS = 0V, I_S = -0.7A
pF
pF
V_DS = -10V, V_GS = 0V
f = 1.0MHz
pF
ns
ns V_DD = -10V, I_D = -0.4A,
ns V_GS = -5.0V, R_GEN = 50Ω
ns
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