DMP2215L Datasheet, PDF (1/2 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product specification
DMP2215L
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance:
R_DS(ON) < 100mΩ @ V_GS = -4.5V, I_D = -2.7A
R_DS(ON) < 215mΩ @ V_GS = -2.5V, I_D = -2.0A
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
SOT-23
Drain
D
Gate
TOP VIEW
Source
EQUIVALENT CIRCUIT
G
S
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 3)
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
-20
±12
-2.7
-2
8
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 1)
Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.08
115
-55 to +150
Units
W
°C/W
°C
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