DMP2123L Datasheet, PDF (1/2 Pages) Diodes Incorporated – P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product specification
DMP2123L
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low R_DS(ON):
• 72 mΩ @V_GS = -4.5V
• 108 mΩ @V_GS = -2.7V
• 123 mΩ @V_GS = -2.5V
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4)
Mechanical Data
• Case: SOT-23
• Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram Below
• Weight: 0.008 grams (approximate)
SOT-23
Drain
D
Gate
TOP VIEW
Source
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
I_S
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1); Steady-State
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
G
S
TOP VIEW
Value
-20
±12
-3.0
-2.4
-15
2.0
Value
1.4
90
-55 to +150
Unit
V
V
A
A
A
Unit
W
°C/W
°C
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