DMP1045U Datasheet, PDF (1/2 Pages) Diodes Incorporated – Low On-Resistance

Product specification
Product Summary
V_(BR)DSS
-12V
R_{DS(on) max}
31mΩ@ V_GS = -4.5V
45mΩ@ V_GS =-2.5V
I_D
T_A = 25°C
5.2A
4.3A
DMP1045U
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected Up To 3kV
• "Green" Device, Halogen and Antimony Free (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
• Analog Switch
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0072 grams (approximate)
Drain
SOT-23
D
ESD PROTECTED TO 3kV
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMP1045U-7
1. No purposefully added lead. Halogen and Antimony Free.
G
S
Pin Configuration
Case
SOT-23
Marking Information
Gate
Gate
Protection
Diode
Source
Internal Schematic
Packaging
3,000/Tape & Reel
15P
15P = Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
Feb
1
2
2011
Y
Mar
Apr
3
4
2012
Z
May
Jun
5
6
2013
A
Jul
Aug
7
8
2014
B
Sep
Oct
9
O
2015
C
Nov
Dec
N
D
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