DMN601K Datasheet, PDF (1/1 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SMD Type
Features
• Low On-Resistance: R_DS(ON)
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 4 and 6)
• ESD Protected Up To 2kV
Product specification
DMN601
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
SOT-23
Drain
D
ESD protected up to 2kV
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Continuous
Pulsed (Note 3)
Symbol
V_DSS
V_GSS
I_D
G
S
TOP VIEW
Pin Out Configuration
Value
60
±20
300
800
Units
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
350
357
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BV_DSS 60 ⎯
⎯
V V_GS = 0V_, I_D = 10μA
I_DSS
⎯ ⎯ 1.0 μA V_DS = 60V, V_GS = 0V
I_GSS
⎯ ⎯ ±10 μA V_{GS =} ±20V, V_DS = 0V
V_GS(th) 1.0 1.6 2.5 V V_DS = 10V, I_D = 1mA
R_{DS (ON)}
⎯
⎯
⎯ 2.0
⎯ 3.0
Ω ^{VGS = 10V, ID = 0.5A}
V_GS = 5V, I_D = 0.05A
|Y_fs|
80 ⎯ ⎯ ms V_DS = 10V, I_D = 0.2A
C_iss
C_oss
C_rss
⎯ ⎯ 50 pF
⎯ ⎯ 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz
⎯ ⎯ 5.0 pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead. Halogen and Antimony Free.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Detail go to our website at www.twtysemi.com
5. Short duration pulse test used to minimize self-heating effect.
6. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb₂O₃ Fire Retardants.
http://www.twtysemi.com
[e-mail]
4008-318-123
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