DMN5L06K Datasheet, PDF (1/1 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SMD Type
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage (1.0V max)
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Up To 2kV
• "Green" Device (Note 4)
• Qualified to AEC-Q101 standards for High Reliability
Product specification
DMN5L06
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
SOT-23
Drain
D
Gate
ESD protected up to 2kV
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Continuous
Pulsed (Note 3)
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Symbol
V_DSS
V_GSS
I_D
G
S
TOP VIEW
Value
Unit
50
V
±20
V
300
800
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
350
357
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Symbol Min
Typ
Max
Unit
Test Condition
BV_DSS
50
@ T_C = 25°C
I_DSS
⎯
I_GSS
⎯
⎯
⎯
V V_GS = 0V, I_D = 10μA
⎯
60
nA V_DS = 50V, V_GS = 0V
1
μA ^VGS ^{= ±12V, V}DS ^{= 0V}
⎯
500
nA V_GS = ±10V, V_DS = 0V
50
nA _{VGS = ±5V, VDS = 0V}
V_GS(th)
0.49
⎯
1.0
V V_DS = V_GS, I_D = 250μA
⎯
⎯
3.0
V_GS = 1.8V, I_D = 50mA
R_DS(ON)
⎯
⎯
⎯
2.5
⎯
2.0
Ω V_GS = 2.5V, I_D = 50mA
V_GS = 5.0V, I_D = 50mA
I_D(ON)
0.5
1.4
⎯
A V_GS = 10V, V_DS = 7.5V
|Y_fs|
200
⎯
⎯
mS V_DS =10V, I_D = 0.2A
V_SD
0.5
⎯
1.4
V V_GS = 0V, I_S = 115mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
⎯
C_oss
⎯
C_rss
⎯
⎯
50
pF
⎯
25
pF
V_DS = 25V, V_GS = 0V
f = 1.0MHz
⎯
5.0
pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10mS, Duty Cycle ≤1%.
4. Short duration pulse test used to minimize self-heating effect.
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