DMN3150L Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product specification
DMN3150L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance:
R_DS(ON) < 54mΩ @ V_GS = 10V
R_DS(ON) < 72mΩ @ V_GS = 4.5V
R_DS(ON) < 115mΩ @ V_GS = 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
SOT-23
TOP VIEW
Drain
Gate
Source
EQUIVALENT CIRCUIT
D
G
S
Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain Source Voltage
V_DSS
30
V
Gate-Source Voltage
V_GSS
±12
V
Drain Current (Note 1)
T_A = 25°C
T_A = 70°C
I_D
3.8
3.1
A
Drain Current (Note 1)
Pulsed
I_DM
15
A
Body-Diode Continuous Current (Note 1)
I_S
2.0
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
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