DMN3112S Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features
• Low On-Resistance:
57mΩ @ V_GS = 10V
112mΩ @ V_GS = 4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
SOT23
Gate
Product specification
DMN3112S
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Drain
D
Top View
Source
Equivalent Circuit
G
S
Top View
Pin Configuration
Ordering Information (Note 3)
Notes:
Part Number
DMN3112S-7
DMN3112SQ-7
Qualification
Commercial
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
Marking Information
MN4
MN4 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: V = 2008)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
2
2010
X
2011
Y
Mar
Apr
May
3
4
5
2012
Z
Jun
6
2013
A
Jul
7
2014
B
Aug
8
2015
C
Sep
Oct
9
O
2016
D
Nov
N
2017
E
Dec
D
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