DMN3050S Datasheet, PDF (1/1 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

SMD Type
Features
• Low On-Resistance:
35mΩ @ V_GS = 10V
50mΩ @ V_GS = 4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q 101 Standards for High Reliability
Product specification
DMN3050S
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Drain
SOT-23
D
Gate
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
T_A = 25°C
T_A = 70°C
Pulsed
Source
Equivalent Circuit
Symbol
V_DSS
V_GSS
I_D
I_DM
I_S
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
G
S
TOP VIEW
Value
Unit
30
V
±20
V
5.2
4.2
A
20
A
2.0
A
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol Min
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
BV_DSS
30
I_DSS
⎯
I_GSS
⎯
Gate Threshold Voltage
Static Drain-Source On-Resistance
V_GS(th)
1
R_{DS (ON)}
⎯
⎯
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
g_fs
⎯
V_SD
⎯
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
⎯
C_oss
⎯
C_rss
⎯
Notes:
1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
3. Detail go to our website at www.twtysemi.com
4. Short duration pulse test used to minimize self-heating effect.
Typ
Max Unit
Test Condition
⎯
⎯
V V_GS = 0V, I_D = 250μA
⎯
1
μA V_DS = 30V, V_GS = 0V
⎯
±100
nA V_GS = ±20V, V_DS = 0V
1.5
3
V V_DS = V_GS, I_D = 250μA
27
40
35
50
mΩ
V_GS = 10V, I_D = 5.2A
V_GS = 4.5V, I_D = 4.2A
6.5
⎯
S V_DS = 5V, I_D = 5.2A
0.7
1
V V_GS = 0V, I_S = 1.0A
390
⎯
pF
55
⎯
pF
V_DS = 15V, V_GS = 0V
f = 1.0MHz
45
⎯
pF
http://www.twtysemi.com
[e-mail]
4008-318-123
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