DMN3033LSN Datasheet, PDF (1/2 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low Gate Charge
• Low R_DS(ON):
• 30 mΩ @V_GS = 10V
• 40 mΩ @V_GS = 4.5V
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• "Green" Device (Note 4)
Product specification
DMN3033LSN
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SC-59
• Case Material - Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.014 grams (approximate)
SC-59
Top View
Drain
Gate
Source
Equivalent Circuit
D
G
S
Pin Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1) Continuous
Pulsed Drain Current (Note 2)
Body-Diode Continuous Current (Note 1)
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
I_S
Value
30
±20
6
5
24
2.25
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1) t ≤10s
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Notes:
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and test pulse width t ≤10s.
2. Repetitive Rating, pulse width limited by junction temperature.
3. No purposefully added lead.
Value
1.4
90
-55 to +150
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Unit
V
V
A
A
A
Unit
W
°C /W
°C
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